elektronische bauelemente SSI3139J -0.66a, -20v, r ds(on) 520 m dual p-ch enhancement mode power mosfet 15-apr-2016 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description SSI3139J is a dual p channel mos which has been designed to be used as a power trench process to optimize r ds(on) . features high side switching low on-resistance low threshold fast switching speed applications load/power switching power supply converter circuits battery-operated system marking package information package mpq leader size sot-563 3k 7 inch maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -20 v typical gate-source voltage v gs 12 v continuous drain current i d -0.66 a pulsed drain current 1 i dm -2.64 a power dissipation 2 p d 150 mw thermal resistance from junction to ambient r ja 833 c/ w junction and storage temperature range t j , t stg 150, -55~150 c sot-563 3 9 k e f j b c d g a h millimeter millimeter ref. min. max. ref. min. max. a 1.50 1.70 f 0.09 0.16 b 1.50 1.70 g 0.45 0.55 c 0.525 0.60 h 0.17 0.27 d 1.10 1.30 j 0.10 0.30 e - 0.05
elektronische bauelemente SSI3139J -0.66a, -20v, r ds(on) 520 m dual p-ch enhancement mode power mosfet 15-apr-2016 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition on/off states drain-source breakdown voltage v (br)dss -20 - - v v gs =0, i d = -250 a zero gate voltage drain current i dss - - -1 a v ds = -20v, v gs =0 gate-source leakage current i gss - - 20 a v ds =0v, v gs = 10v gate-threshold voltage 3 v gs(th) -0.35 - -1.1 v v ds =v gs, i d = -250 a - - 520 v gs = -4.5v, i d = -1a - - 700 v gs = -2.5v, i d = -0.8a drain-source on resistance 3 r ds(on) - 950 - m v gs = -1.8v, i d = -0.5a forward transconductance g fs - 0.8 - s v ds = -10v, i d = -0.54a dynamic characteristics input capacitance c iss - 170 - output capacitance c oss - 25 - reverse transfer capacitance c rss - 15 - pf v ds = -16v v gs =0 f=1mhz switching characteristics turn-on delay time t d(on) - 9 - rise time t r - 5.8 - turn-off delay time t d(off) - 32.7 - fall time t f - 20.3 - ns v ds = -10v v gs = -4.5v r g =10 i d = -0.2a drain-source diode characteristics diode forward voltage v sd - - -1.2 v i s = -0.5a, v gs =0 notes: 1. repetitive rating: the pulse width is limited by the maximum junction temperature. 2. this test is performed without heat sink at t a =25c. 3. pulse test: pulse width Q 300 s, duty cycle Q 0.5%.
elektronische bauelemente SSI3139J -0.66a, -20v, r ds(on) 520 m dual p-ch enhancement mode power mosfet 15-apr-2016 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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